silicon epitaxial npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. se sese semelab limited melab limited melab limited melab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8963 issue 1 page 1 of 3 bft29 / BFT30 / bft31 hermetic to-18 metal package designed for general purpose amplifiers, and audio driv er applications screening options available absolute maximum ratings (t a = 25c unless otherwise stated) bft29 BFT30 bft31 v cbo collector ? base voltage 90v 70 60 v ceo collector ? emitter voltage 80v 60 50 v ebo emitter ? base voltage 5v i c continuous collector current 1.0a p d total power dissipation at t a = 25c 360mw derate above 25c 2mw/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters max units r ja thermal resistance, junction to ambient 486 c/w
silicon epitaxial npn transistor bft29 / BFT30 / bft31 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8963 issue 1 page 2 of 3 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min. typ. max. units bft29 90 BFT30 70 v (br)cbo collector-base breakdown voltage i c = 10 a i e = 0 bft31 60 v bft29 80 BFT30 60 v (br)ceo (1) collector-emitter breakdown voltage i c = 10ma i b = 0 bft31 50 v v (br)ebo emitter-base breakdown voltage i e = 10 a i c = 0 5 v i cbo collector-cut-off current v cb = rated v ceo , i e = 0 100 na bft29 25 BFT30 45 i c = 1.0ma v ce = 10v bft31 45 bft29 30 BFT30 50 i c = 10ma v ce = 10v bft31 50 bft29 50 250 BFT30 75 250 i c = 100ma v ce = 10v bft31 100 300 bft29 30 BFT30 50 i c = 500ma v ce = 10v bft31 50 bft29 20 BFT30 25 h fe (1) forward-current transfer ratio i c = 1.0a v ce = 10v bft31 25 bft29 0.95 BFT30 0.75 i c = 500ma i b = 50ma bft31 0.75 bft29 1.6 BFT30 1.0 v ce(sat) (1) collector-emitter saturation voltage i c = 1.0a i b = 100ma bft31 1.0 i c = 500ma i b = 50ma 1.1 v be(sat) (1) base-emitter saturation voltage i c = 1.0a i b = 100ma 2.0 v
silicon epitaxial npn transistor bft29 / BFT30 / bft31 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8963 issue 1 page 3 of 3 dynamic characteristics i c = 40ma v ce = 10v f t transition frequency f = 20mhz 80 95 mhz v cb = 10v i e = 0 c obo output capacitance f = 1.0mhz 8.5 10 pf notes notes notes notes (1) pulse width 300us, 2% mechanical data dimensions in mm (inches) 1 3 2 2 . 5 4 ( 0 . 1 0 0 ) n o m . 0 . 4 8 ( 0 . 0 1 9 ) 0 . 4 1 ( 0 . 0 1 6 ) d i a . 5 . 8 4 ( 0 . 2 3 0 ) 5 . 3 1 ( 0 . 2 0 9 ) 4 . 9 5 ( 0 . 1 9 5 ) 4 . 5 2 ( 0 . 1 7 8 ) 5 . 3 3 ( 0 . 2 1 0 ) 4 . 3 2 ( 0 . 1 7 0 ) 1 2 . 7 ( 0 . 5 0 0 ) m i n . 5 . 3 3 ( 0 . 2 1 0 ) 4 . 3 2 ( 0 . 1 7 0 ) 1 2 . 7 ( 0 . 5 0 0 ) m i n . to-18 (to-206aa) pin 1 - emitter pin 2 - base pin 3 - collector
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